Electrical resistivity of acceptor carbon in GaAs
dc.contributor.author | Silva, Antonio Ferreira da | pt_BR |
dc.contributor.author | Pepe, I. | pt_BR |
dc.contributor.author | Sernelius, Bo E. | pt_BR |
dc.contributor.author | Persson, C. | pt_BR |
dc.contributor.author | Ahuja, R. | pt_BR |
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Suzuki, Yoko | pt_BR |
dc.contributor.author | Yang, Y. | pt_BR |
dc.date.accessioned | 2014-05-31T02:06:45Z | pt_BR |
dc.date.issued | 2004 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95830 | pt_BR |
dc.description.abstract | The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal–nonmetal transition was found to be about 1018 cm-³. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Vol. 95, no. 5 (Mar. 2004), p. 2532-2535 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Carbono | pt_BR |
dc.subject | Resistividade elétrica | pt_BR |
dc.subject | Arseneto de galio | pt_BR |
dc.subject | Semicondutores iii-v | pt_BR |
dc.subject | Implantacao ionica | pt_BR |
dc.subject | Transição metal isolante | pt_BR |
dc.subject | Dopagem de semicondutores | pt_BR |
dc.title | Electrical resistivity of acceptor carbon in GaAs | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000416066 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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