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Electrical resistivity of acceptor carbon in GaAs

dc.contributor.authorSilva, Antonio Ferreira dapt_BR
dc.contributor.authorPepe, I.pt_BR
dc.contributor.authorSernelius, Bo E.pt_BR
dc.contributor.authorPersson, C.pt_BR
dc.contributor.authorAhuja, R.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorSuzuki, Yokopt_BR
dc.contributor.authorYang, Y.pt_BR
dc.date.accessioned2014-05-31T02:06:45Zpt_BR
dc.date.issued2004pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95830pt_BR
dc.description.abstractThe electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal–nonmetal transition was found to be about 1018 cm-³.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Vol. 95, no. 5 (Mar. 2004), p. 2532-2535pt_BR
dc.rightsOpen Accessen
dc.subjectCarbonopt_BR
dc.subjectResistividade elétricapt_BR
dc.subjectArseneto de galiopt_BR
dc.subjectSemicondutores iii-vpt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectTransição metal isolantept_BR
dc.subjectDopagem de semicondutorespt_BR
dc.titleElectrical resistivity of acceptor carbon in GaAspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000416066pt_BR
dc.type.originEstrangeiropt_BR


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