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Ultrafast trapping times in ion implanted InP

dc.contributor.authorCarmody, Christinept_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorTan, Hoe H.pt_BR
dc.contributor.authorJagadish, Chenupatipt_BR
dc.contributor.authorLederer, Max J.pt_BR
dc.contributor.authorKoley, Vesselinpt_BR
dc.contributor.authorLuther-Davies, B.pt_BR
dc.contributor.authorDao, L.V.pt_BR
dc.contributor.authorGal, Michaelpt_BR
dc.date.accessioned2014-05-31T02:06:43Zpt_BR
dc.date.issued2002pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95824pt_BR
dc.description.abstractAs+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Melville. Vol. 92, no. 5 (Sept. 2002), p. 2420-2423pt_BR
dc.rightsOpen Accessen
dc.subjectMobilidade de portadorespt_BR
dc.subjectResistividade elétricapt_BR
dc.subjectEfeito hallpt_BR
dc.subjectSemicondutores iii-vpt_BR
dc.subjectCompostos de indiopt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectRecozimento térmico rápidopt_BR
dc.subjectRefletividadept_BR
dc.subjectEspectros de evolução no tempopt_BR
dc.subjectDifração de raios Xpt_BR
dc.titleUltrafast trapping times in ion implanted InPpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000334504pt_BR
dc.type.originEstrangeiropt_BR


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