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dc.contributor.authorLottis, Daniel Kurtpt_BR
dc.contributor.authorFert, Albert R.pt_BR
dc.contributor.authorMorel, Robertpt_BR
dc.contributor.authorPereira, Luis Gustavopt_BR
dc.contributor.authorJacquet, J.C.pt_BR
dc.contributor.authorGaltier, P.pt_BR
dc.contributor.authorCoutellier, J.M.pt_BR
dc.contributor.authorValet, Tierrypt_BR
dc.date.accessioned2014-05-20T02:04:52Zpt_BR
dc.date.issued1993pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95415pt_BR
dc.description.abstractA study of the vtiation of the magnetoresistancein (Ni80Fe20/Cu/Co/Cu) multilayers with the thicknesses tNiFe, tcO, and &;cu of each type of component layer has been performed. The magnetoresistance (MR), which at 4 .2 K is larger than 20% for many samples, has been measured for fields applied both parallel and perpendicular to the current. This allows a direct measurement of the anisotropic magnetorestistance as well as an estimate of the spin-valve contribution to the total MR. The dependence of the MR on tcu indicates the presence of an oscillatory interlayer exchange c.oupling through the Cu layers with a period of about 12 Å. The dependence of the MR on tNiFe and tcO was studied at tcu=50 Å, for which the coupling is negligible. In this limit, the variation of the MR is dominated by the thickness dependenceo f the NiFe and Co component layer coercivitie-s, which determine the degree of antiparallel alignement obtained during magnetization reversal.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Woodbury. Vol. 73, no. 10 (May 1993), p. 5515-5517pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectMagnetorresistênciapt_BR
dc.subjectImplantação de íonspt_BR
dc.titleMagnetoresistance in rf-sputtered(nife/cu/co/cu) spin-valve multilayerspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000256791pt_BR
dc.type.originEstrangeiropt_BR


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