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Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)

dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorBernas, H.pt_BR
dc.contributor.authorDesimoni, Judithpt_BR
dc.contributor.authorLin, X.W.pt_BR
dc.contributor.authorMaltez, Rogério Luispt_BR
dc.date.accessioned2014-05-17T02:07:06Zpt_BR
dc.date.issued1996pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95366pt_BR
dc.description.abstractIon-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of y-FeSi2, α-FeSi2 and β-FeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the y-a and α-β phase transitions were determined as ≈ 11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 79, n. 2 (Jan. 1996), p. 752-762pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectCrescimento epitaxialpt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.subjectImplantação de íonspt_BR
dc.titleSequential phase formation by ion-induced epitaxy in fe-implanted si(001)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000141660pt_BR
dc.type.originEstrangeiropt_BR


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