Dopants redistribution during titanium-disilicide formation by rapid thermal processing

dc.contributor.author	Pasa, Andre Avelino	pt_BR
dc.contributor.author	Souza, Joel Pereira de	pt_BR
dc.contributor.author	Baumvol, Israel Jacob Rabin	pt_BR
dc.contributor.author	Freire Junior, Fernando Leite	pt_BR
dc.date.accessioned	2014-05-17T02:06:52Z	pt_BR
dc.date.issued	1987	pt_BR
dc.identifier.issn	0021-8979	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/95359	pt_BR
dc.description.abstract	Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.	en
dc.format.mimetype	application/pdf
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Journal of Applied Physics. Woodbury. Vol. 61, n. 3 (Feb. 1987), p. 1228-1230	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Semicondutores	pt_BR
dc.subject	Dopagem de semicondutores	pt_BR
dc.title	Dopants redistribution during titanium-disilicide formation by rapid thermal processing	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000112930	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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