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dc.contributor.authorBaibich, Mario Norbertopt_BR
dc.contributor.authorMuir, W.B.pt_BR
dc.contributor.authorVan Wyck, D.R.pt_BR
dc.date.accessioned2014-05-17T02:06:52Zpt_BR
dc.date.issued1981pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95358pt_BR
dc.description.abstractThe electrical resistance of amorphous Fe80B20 has been measured as a function of time at various temperatures during an isothermal crystallization process. The results fit a universal curve when ∆R/∆R1 is plotted against t/t1. The value of t, as a function of annealing temperature fits the Johnson-Mehl-Avra:ni equation with n = 3 changing to 1.4 for t/t1 > 1.4. The resistance of a series of partially crystallized samples was measured between 4.2 and 300 K. dR/dT at 300 K and dR/dlogT below the resistance minimum were both found to be linear funtions of ∆R/∆R1. That is, both the above quantities were found to be strictly proportional to the amount of crystalline phase present. This may pose some difficulty for the structural tunneling model of the low temperature resistance minimum in metallic glasses.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 52, n. 3, part II (Mar. 1981), p. 1886-1888pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectCondutividade elétricapt_BR
dc.subjectCristalizaçãopt_BR
dc.subjectMedidas fisicaspt_BR
dc.subjectLigas amorfaspt_BR
dc.subjectVidros metalicospt_BR
dc.titleElectrical Resistance and Crystallization Characteristics of Fe/Sub 80/B/Sub 20/apt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000127821pt_BR
dc.type.originEstrangeiropt_BR


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