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dc.contributor.authorPeter, Celso R.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorHasenack, Claus Martinpt_BR
dc.date.accessioned2014-05-13T02:03:41Zpt_BR
dc.date.issued1988pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95120pt_BR
dc.description.abstractWe studied the annealing of silicon substrates implanted with a medium dose of boron ions (3 X 10 14 cm-², 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealIng (RTA) processes performed in a nitrogen atmosphere. The annealing efficiency was monitored by visual inspection of the implanted surface with an optical microscope after steam oxidation and Secco etching. The FA is more efficient when performed at a high temperature, but even so, It IS not capable of suppressing completely the implantation damage. On the other hand, the RTA was observed to be more efficient than any FA cycle. We discuss this fact taking into account the influence of the very high heating rates (~250 °C/s) the samples underwent dunng the RT A cycle on the annealing behavior of implantation damage.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 64, no. 5 (Sept. 1988), p. 2696-2699pt_BR
dc.rightsOpen Accessen
dc.subjectImplantacao de ionspt_BR
dc.titleProlonged and rapid thermal annealing of boron implanted siliconpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000014876pt_BR
dc.type.originEstrangeiropt_BR


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