Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles
Fecha
2013Autor
Abstract
Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω: mappings of the (111) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ionbeam- induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations an ...
Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω: mappings of the (111) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ionbeam- induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers. ...
En
Journal of applied crystallography. Copenhagen. Vol. 46, no. 6 (Dec. 2013), p. 1796–1804
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