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dc.contributor.authorGiulian, Raquelpt_BR
dc.contributor.authorBolzan, Charles Airtonpt_BR
dc.contributor.authorSalazar, Josiane Buenopt_BR
dc.contributor.authorCunha, Carlo Requiao dapt_BR
dc.date.accessioned2021-01-06T04:12:25Zpt_BR
dc.date.issued2020pt_BR
dc.identifier.issn2352-4847pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/217054pt_BR
dc.description.abstractThis is a short review about the ion irradiation-induced foams in antimonide films. III–V semiconductors like InSb and GaSb can be transformed into solid foams with nanometric dimensions upon irradiation with swift heavy ions, increasing significantly the effective surface area of the material. The giant surface-to-bulk ratio of solid nanofoams, combined with the small energy bandgap of antimonide binary compounds offer new possibilities for the development of electronic devices with improved energy efficiency. The characterization of antimonide nanofoams structure, composition and electronic properties is thus essential to fully exploit their promising technological advantages. Here we show that InSb and GaSb films deposited by magnetron sputtering on SiO2/Si substrates can be rendered porous upon irradiation with 17 MeV Au +7 ions, while no evidence of porosity was observed in AlSb films irradiated under similar conditions. InSb films initially amorphous, become polycrystalline with zincblende phase upon irradiation with fluence 2x1014 cm−2, at the same time as the accumulation of voids result in the complete transformation of the films from compact-continuous to foam-like structure. Single-crystalline InSb films can also be transformed into solid foams upon irradiation, however, the ion fluence required to attain similar levels of porosity (compared to amorphous InSb deposited by magnetron sputtering) is significantly higher. GaSb films, in a similar way, can also be transformed into solid foams upon irradiation, although, for GaSb films deposited by magnetron sputtering, the structure of the foams is amorphous with significant increase of oxide fraction upon irradiation. The ion irradiation effects on the electronic properties of single crystalline InSb films are also presented. We compare the ion irradiation effects in different antimonide binary compounds with results about their crystalline structure and morphology using X-ray diffraction analysis and scanning electron microscopy.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofEnergy reports. Amsterdam. Vol. 6, suppl. 4 (Feb. 2020), p. 70-76pt_BR
dc.rightsOpen Accessen
dc.subjectAntimonide filmsen
dc.subjectRadiacao ionicapt_BR
dc.subjectIon irradiationen
dc.subjectAntimôniopt_BR
dc.subjectDifração de raios Xpt_BR
dc.subjectXRDen
dc.subjectMicroscopia eletrônica de varredurapt_BR
dc.subjectSEMen
dc.subjectFilmes finos semicondutorespt_BR
dc.titleIon irradiation-induced foams in antimonide binary alloys : a combination of small energy bandgap with giant surface-to-bulk ratiopt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb001120312pt_BR
dc.type.originEstrangeiropt_BR


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