Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)
Fecha
1998Autor
Materia
Abstract
In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural chang ...
In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse. ...
En
Journal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 16, no. 4 (Jul./Aug. 1998), p. 2437-2441
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