Study on radio frequency reactive sputtering deposition of silicon nitride thin films
Fecha
1992Autor
Abstract
A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied to obtain various sets of films. In analyzing the stoichiometry and thickness of the silicon nitride films by Rutherford backscattering spectroscopy, several correlations among deposition parameters and film characteristics could be found. The results can be discussed by ada ...
A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied to obtain various sets of films. In analyzing the stoichiometry and thickness of the silicon nitride films by Rutherford backscattering spectroscopy, several correlations among deposition parameters and film characteristics could be found. The results can be discussed by adapting a reactive sputtering theoretical model to the present conditions. An alternative method to grow films with the same stoichiometry but under different deposition rates was tested. ...
En
Journal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 10, n. 3 (May/June 1992), p. 462-467
Origen
Estranjero
Colecciones
-
Artículos de Periódicos (40175)Ciencias Exactas y Naturales (6132)
Este ítem está licenciado en la Creative Commons License