Navegação Ciências Exatas e da Terra por Assunto "Oxigênio"
Resultados 1-11 de 11
-
Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
(2004) [Artigo de periódico]In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. ... -
Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
(1998) [Artigo de periódico]The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ... -
Diffusion reaction of oxigen in aluminum oxide films on silicon
(2002) [Artigo de periódico]Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the ... -
Experimental and theoretical study of the energy loss of C and O in Zn
(2011) [Artigo de periódico]We present a combined experimental-theoretical study of the energy loss of C and O ions in Zn in the energy range 50–1000 keV/amu. This contribution has a double purpose, experimental and theoretical. On the experimental ... -
A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices
(2013) [Artigo de periódico]High-energy electron scattering is used to investigate Ta films implanted with 10 keV O ions. These films are of interest as they have been used for the fabrication of memristors. High-energy electron scattering is used ... -
Hydrogen trapping in oxigen-deficient hafnium silicates
(2007) [Artigo de periódico]Isotopic substitution, nuclear reaction analysis, and x-ray photoelectron spectroscopy were employed to show that oxygen-deficient hafnium (Hf) silicates trap hydrogen atoms. Based on this experimental observation, we used ... -
Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
(1999) [Artigo de periódico]The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on ... -
Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
(1997) [Artigo de periódico]We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, ... -
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing
(2001) [Artigo de periódico]The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering ... -
The O [iota] line emission in active galactic nuclei revisited
(2002) [Artigo de periódico]UV, visible, and near-infrared spectroscopy is used to study the transitions of neutral oxygen leading to the emission of broad O i λ8446, λ11287, and λ1304 in active galactic nuclei. From the strength of the former two ... -
The temperature of extended gas in active galaxies : evidence for matter-bounded clouds
(1997) [Artigo de periódico]We report measurements of the electron temperature at about a dozen locations in the extended emission-line regions of five active (Seyfert and radio) galaxies. Temperatures (T[O III] and T[N II]) have been determined from ...
