Browsing Exact and Earth Sciences by Subject "Nitrogênio : Implantação de íons"
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Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2
(1998) [Journal article]Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm-². The samples were thermally oxidized in dry O2 at 1050 °C, and ...