Navegação Ciências Exatas e da Terra por Assunto "Nitrogênio"
Resultados 1-12 de 12
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Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
(1998) [Artigo de periódico]The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ... -
A comparative study of sheathing devices to increase robustness in inductively coupled plasma optical emission spectrometry via a nitrogen flow
(2018) [Artigo de periódico]Five different glass sheathing devices were used to introduce 20 mL min 1 N2 sheathing gas around the effluent from the spray chamber to see the effect of their dimensions on plasma robustness as measured using the Mg II ... -
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
(2000) [Artigo de periódico]The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ... -
Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
(2009) [Artigo de periódico]C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy ... -
Empirical models to predict soil nitrogen mineralization
(2002) [Artigo de periódico]Modelos empíricos são equações matemáticas que podem ser ajustadas a resultados experimentais. Esses modelos podem ser utilizados para avaliar ou predizer fenômenos observados ou dados experimentais e auxiliar no desenvolvimento ... -
Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
(1997) [Artigo de periódico]We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, ... -
Low-temperature iron-nitride phase transformations induced by ion bombardment
(1996) [Artigo de periódico]We show that for the Fe–N system the combined use of ion irradiation and thermal annealing can lower the temperature for a given phase transformation. By Ar bombarding N-implanted Fe samples at 250 and 300 °C, we have ... -
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing
(2001) [Artigo de periódico]The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering ... -
Nitrogen diffusion enhancement in a ferrous alloy by deuterium isotopic effect
(2007) [Artigo de periódico]Studies of nitrogen implantation in an iron alloy using photoemission electron spectroscopy, sputtered neutral mass spectrometry, and elastic recoil detection analysis, reveal an enhancement of nitrogen diffusion when ... -
Nitrogen transport during rapid thermal growth of silicon oxynitride films in N/sub 2/ O
(1996) [Artigo de periódico]We investigated the transport of nitrogenous species during rapid thermal growth of silicon oxynitride films on Si in N2O, using N isotopic tracing and high resolution depth profiling techniques. The results indicate that ... -
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation
(1999) [Artigo de periódico]A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation ... -
Variations in the 6.2 μm emission profile in starburst-dominated galaxies : a signature of polycyclic aromatic nitrogen heterocycles (PANHs)?
(2018) [Artigo de periódico]Analyses of the polycyclic aromatic hydrocarbon (PAH) feature profiles, especially the 6.2 μm feature, could indicate the presence of nitrogen incorporated in their aromatic rings. In thiswork, 155 predominantly ...