Navegação Ciências Exatas e da Terra por Assunto "Nitretação"
Resultados 1-6 de 6
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Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
(2000) [Artigo de periódico]The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ... -
Effect of thermal calcinations on the charge transfer resistance of tantalum nitride nanotubes
(2016) [Artigo de periódico]Nanotubes of Ta3N5 were synthesized by thermal Nitridation of Ta2O5 nanotubes under ammonia gas environment. The effect of Nitridation temperature and time was evaluated. Electrochemical impedance spectroscopy was applied ... -
Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
(1999) [Artigo de periódico]Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ... -
Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
(2006) [Artigo de periódico]Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C ... -
Reaction-diffusion model for thermal growth of silicon nitride films on Si
(2000) [Artigo de periódico]Thermal growth of ultrathin silicon nitride films on Si in NH₃ is modeled as a dynamic system governed by reaction-diffusion equations. Solution of the model yields profiles of the involved species consistent with experimental ... -
Thermal stability of plasma-nitrided aluminum oxide films on Si
(2004) [Artigo de periódico]The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si ...
