Navegação Ciências Exatas e da Terra por Assunto "Falhas de empilhamento"
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Ion beam synthesis of cubic-SiC layer on Si(111) substrate
(2006) [Artigo de periódico]We have investigated SiC layers produced by ion beam synthesis on Si (111) substrates using different procedures. Bare Si (111) and SiO2/Si (111) structures were implanted with carbon at 40 keV up to a fluence of 4 1017 ...