Navegação Ciências Exatas e da Terra por Assunto "Estados de impureza"
Resultados 1-3 de 3
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Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
(2000) [Artigo de periódico]The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried ... -
Electrical activation of carbon in GaAs : implantation temperature effects
(2001) [Artigo de periódico]Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in ... -
Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles : bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions
(2010) [Artigo de periódico]We investigated the optical absorption of the fundamental band edge and the origin of the emission from β-FeSi2 nanoparticles synthesized by ion-beam-induced epitaxial crystallization of Fe+ implanted SiO2 / Si 100 followed ...