Navegação Ciências Exatas e da Terra por Assunto "Estabilidade térmica"
Resultados 1-10 de 10
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Characterization of deep level traps responsible for isolation of proton implanted GaAs
(2003) [Artigo de periódico]Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability ... -
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
(2002) [Artigo de periódico]The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly ... -
Electrical isolation of InGaP by proton and helium ion irradiation
(2002) [Artigo de periódico]Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the ... -
Electrical isolation of n-type and p-type InP layers by proton bombardment
(2001) [Artigo de periódico]The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found ... -
Influence of the polyhedral oligomeric silsesquioxane n-phenylaminopropyl - POSS in the thermal stability and the glass transition temperature of epoxy resin
(2013) [Artigo de periódico]In this study, epoxy nanocomposites containing different fractions of n-phenylaminopropyl (POSS) were prepared. The nanocomposites were studied by transmission electron microscopy (TEM), gel content, dynamicmechanical ... -
Stability of zirconium silicate films on Si under vacuum and O/sub 2/ annealing
(2001) [Artigo de periódico]The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow ... -
Thermal behavior of hafnium-based ultrathin films on silicon
(2003) [Artigo de periódico]We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely hafnium oxide (HfO2), silicate (HfSixOy), and aluminum silicate (AlHfxSiyOz), deposited on silicon. These materials are ... -
Thermal stability and diffusion in gadolinium silicate gate dielectric films
(2001) [Artigo de periódico]Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating ... -
Thermal stability of plasma-nitrided aluminum oxide films on Si
(2004) [Artigo de periódico]The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si ... -
Thermal stability of soy-based polyurethanes
(2005) [Artigo de periódico]New types of polyurethanes were prepared by reacting diisocyanates and formiated soy polyols with different OH functionalities. Thermal properties and degradation kinetics were investigated by TGA. All prepared PU’s showed ...