• Diffusion of near surface defects during the thermal oxidation of silicon 

      Ganem, Jean-Jacques; Trimaille, Isabelle; Andre, P.; Rigo, Serge; Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin (1997) [Artigo de periódico]
      The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigated using sequential treatments in natural oxygen (16O2) and in heavy oxygen (18O2) in a Joule effect furnace. The 18O depth ...