Navegação Ciências Exatas e da Terra por Assunto "Crescimento de semicondutores"

Resultados 1-3 de 3

    • Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substrate 

      Soares, Gabriel Vieira; Krug, Cristiano; Miotti, Leonardo; Bastos, Karen Paz; Lucovsky, Gerald; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2011) [Artigo de periódico]
      Thermally driven atomic transport in HfO2 /GeO2/substrate structures on Ge 001 and Si 001 was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing ...

    • Investigation of indirect structural and chemical parameters of GeSi nanoparticles in a silica matrix by combined synchrotron radiation techniques 

      Gasperini, A. A. M.; Malachias, A.; Fabbris, Gilberto Fernandes Lopes; Kellermann, Guinter; Gobbi, Angelo Luiz; Avendaño Soto, E.; Azevedo, Gustavo de Medeiros (2012) [Artigo de periódico]
      The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based techniques. The shape, average diameter and size dispersion were obtained from grazing-incidence small-angle X-ray scattering data. ...

    • Lift-off protocols for thin films for use in EXAFS experiments 

      Decoster, S.; Glover, C. J.; Johannessen, B.; Giulian, Raquel; Sprouster, David J.; Kluth, Patrick; Araújo, Leandro Langie; Hussain, Zohair S.; Schnohr, Claudia S.; Salama, H.; Kremer, Felipe; Temst, Kristiaan; Vantomme, A.; Ridgway, M.C. (2013) [Artigo de periódico]
      Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the ...