Navegação Ciências Exatas e da Terra por Assunto "Compostos de alumínio"

Resultados 1-5 de 5

    • Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) 

      Morais, Jonder; Rosa, Elisa Brod Oliveira da; Pezzi, Rafael Peretti; Miotti, Leonardo; Baumvol, Israel Jacob Rabin (2001) [Artigo de periódico]
      The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford ...

    • Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation 

      Van Lippen, Twan; Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati (2002) [Artigo de periódico]
      The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly ...

    • Nitrogen bonding, stability, and transport in AION films on Si 

      Soares, Gabriel Vieira; Bastos, Karen Paz; Pezzi, Rafael Peretti; Miotti, Leonardo; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin; Hinkle, C.; Lucovsky, Gerald (2004) [Artigo de periódico]
      The chemical environment of N in nitrided aluminum oxide films on Si~001! was investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding configurations were identified, namely N–Al and N–O–Al, ...

    • Thermal behavior of hafnium-based ultrathin films on silicon 

      Pezzi, Rafael Peretti; Morais, Jonder; Dahmen, Silvio Renato; Bastos, Karen Paz; Miotti, Leonardo; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Freire Junior, Fernando Lazaro (2003) [Artigo de periódico]
      We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely hafnium oxide (HfO2), silicate (HfSixOy), and aluminum silicate (AlHfxSiyOz), deposited on silicon. These materials are ...

    • Thermal stability of plasma-nitrided aluminum oxide films on Si 

      Bastos, Karen Paz; Pezzi, Rafael Peretti; Miotti, Leonardo; Soares, Gabriel Vieira; Driemeier, Carlos Eduardo; Morais, Jonder; Baumvol, Israel Jacob Rabin; Hinkle, C.; Lucovsky, Gerald (2004) [Artigo de periódico]
      The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si ...