Navegação Ciências Exatas e da Terra por Autor "Swider, W."

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    • Synthesis of GaN by N ion implantation in GaAs (001) 

      Lin, X.W.; Behar, Moni; Maltez, Rogério Luis; Swider, W.; Liliental-Weber, Zuzanna; Washburn, J. (1995) [Artigo de periódico]
      Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission ...