Navegação Ciências Exatas e da Terra por Autor "Suprun-Belevich, Yu."
Resultados 1-3 de 3
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Damage accumulation in Si crystal during ion implantation at elevated temperatures : evidence of chemical effects
Souza, Joel Pereira de; Suprun-Belevich, Yu.; Boudinov, Henri Ivanov; Cima, Carlos Alberto (2000) [Artigo de periódico]Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and high doses (>=3x1016 cm-²) was studied using Rutherford backscattering spectroscopy, cross-section transmission electron ... -
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing
Souza, Joel Pereira de; Suprun-Belevich, Yu.; Boudinov, Henri Ivanov; Cima, Carlos Alberto (2001) [Artigo de periódico]The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering ... -
Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
Cima, Carlos Alberto; Boudinov, Henri Ivanov; Souza, Joel Pereira de; Suprun-Belevich, Yu.; Fichtner, Paulo Fernando Papaleo (2000) [Artigo de periódico]The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing ...