Navegação Ciências Exatas e da Terra por Autor "Plummer, James D."

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    • A modified lightly doped drain structure for vlsi mosfet's 

      Bampi, Sergio; Plummer, James D. (1986) [Artigo de periódico]
      A new n-MOS LDD-like device structure (the J-MOS transistor) is proposed. It’s design, simulation, and fabrication are studied in this paper. n-channel MOSFET’s with Le, below 2µm suffer from high-field effects that must ...