Navegação Ciências Exatas e da Terra por Autor "Palmieri, Rodrigo"
Resultados 1-3 de 3
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Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
(2009) [Artigo de periódico]The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density ... -
Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
(2013) [Artigo de periódico]In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were ... -
The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
(2013) [Artigo de periódico]To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by ...
