• Carbon deposition in Si as a consequence of H and He irradiations : a systematic study 

      Mörschbächer, Marcio José; Behar, Moni (2002) [Artigo de periódico]
      In the present work we have investigated the influence of different parameters that determine the C deposition on a Si target. Among them we have studied the pressure of the irradiation chamber, the implantation fluence, ...
    • Carrier dynamics in stacked InP/GaAs quantum dots 

      Veloso, A.B.; Nakaema, Marcelo Kiyoshi Kian; Godoy, Marcio P.F. de; Lopes, João Marcelo Jordão; Likawa, Fernando; Brasil, Maria José Santos Pompeu; Bortoleto, José Roberto Ribeiro; Cotta, Mônica Alonso; Fichtner, Paulo Fernando Papaleo; Mörschbächer, Marcio José; Madureira, J.R. (2007) [Artigo de periódico]
      We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform ...
    • Structural and optical properties of InP quantum dots grown on GaAs(001) 

      Godoy, Marcio P.F. de; Nakaema, Marcelo Kiyoshi Kian; Likawa, Fernando; Brasil, Maria José Santos Pompeu; Lopes, João Marcelo Jordão; Bortoleto, José Roberto Ribeiro; Cotta, Mônica Alonso; Paniago, Rogério Magalhães; Mörschbächer, Marcio José; Fichtner, Paulo Fernando Papaleo (2007) [Artigo de periódico]
      We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray ...