• Ion implantation in β-Ga2O3 : Physics and technology 

      Nikolskaya, Alena; Okulich, Evgenia; Korolev, Dmitry; Stepanov, Anton V.; Nikolichev, Dmitry; Mikhaylov, Alexey; Tetelbaum, David; Almaev, Aleksei; Bolzan, Charles Airton; Buaczick Júnior, Antônio; Giulian, Raquel; Grande, Pedro Luis; Kumar, Ashok; Kumar, Mahesh; Gogova, Daniela (2021) [Artigo de periódico]
      Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field ...