Navegação Ciências Exatas e da Terra por Autor "Hegde, R.I."
Resultados 1-2 de 2
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Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100)
Klein, T.M.; Niu, D.; Epling, W.S.; Li, W.; Maher, D.M.; Hobbs, C.C.; Hegde, R.I.; Baumvol, Israel Jacob Rabin; Parsons, G.N. (1999) [Artigo de periódico]Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ;3.5 nm Al2O3 films deposited by low temperature ~,400 °C! chemical vapor deposition on Si~100!. Narrow nuclear resonance and Auger depth ... -
Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
Bastos, Karen Paz; Morais, Jonder; Miotti, Leonardo; Pezzi, Rafael Peretti; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Hegde, R.I.; Tseng, Hsing-Huang; Tobin, Phil J. (2002) [Artigo de periódico]Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was ...