Navegação Ciências Exatas e da Terra por Autor "Freire Junior, Fernando Leite"

Resultados 1-4 de 4

    • Dopants redistribution during titanium-disilicide formation by rapid thermal processing 

      Pasa, Andre Avelino; Souza, Joel Pereira de; Baumvol, Israel Jacob Rabin; Freire Junior, Fernando Leite (1987) [Artigo de periódico]
      Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly ...

    • Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses 

      Freire Junior, Fernando Leite; Franceschini, Dante F.; Achete, Carlos A.; Baumvol, Israel Jacob Rabin; Brusa, R.S.; Mariotto, Gino; Canteri, R. (1996) [Artigo de periódico]
      Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0 x 10 16 N/cm2. The implantation energy was chosen ...

    • Study on direct current reactive sputtering deposition of aluminum nitride thin films 

      Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin; Schreiner, Wido Herwig; Freire Junior, Fernando Leite (1992) [Artigo de periódico]
      Aluminum nitride thin films were deposited by dc magnetron reactive sputtering. The deposition parameters (cathode voltage, incident power, total pressure, and N2 partial pressure) were correlated and their influences on ...

    • Study on radio frequency reactive sputtering deposition of silicon nitride thin films 

      Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin; Schreiner, Wido Herwig; Freire Junior, Fernando Leite (1992) [Artigo de periódico]
      A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied ...