Navegação Ciências Exatas e da Terra por Autor "Fink, Dietmar"

Resultados 1-4 de 4

    • Ion radiation induced diffusion of xe implanted into a polymer film 

      Kaschny, Jorge Ricardo de Araujo; Amaral, Livio; Behar, Moni; Fink, Dietmar (1992) [Artigo de periódico]
      In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post-bombarded the ...

    • Range and thermal behavior studies of Au and Bi implanted into photoresist films 

      Behar, Moni; Grande, Pedro Luis; Amaral, Livio; Kaschny, Jorge Ricardo de Araujo; Zawislak, Fernando Claudio; Guimaraes, Renato Bastos; Biersack, J.P.; Fink, Dietmar (1990) [Artigo de periódico]
      The Rutherford backscattering technique has been used to determine range parameters of Au and Bi íons implanted into AZ1350 photoresist films at energies from 20 to 300 keV. The experimental results are 20 to 25% higher ...

    • Range measurements and thermal stability study of az111 photoresist implanted with bi ions 

      Guimaraes, Renato Bastos; Amaral, Livio; Behar, Moni; Zawislak, Fernando Claudio; Fink, Dietmar (1988) [Artigo de periódico]
      The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keY. An overaU good agreement is found between the ...

    • Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure 

      Olivieri, Carlos Alberto; Behar, Moni; Grande, Pedro Luis; Fichtner, Paulo Fernando Papaleo; Zawislak, Fernando Claudio; Biersack, J.P.; Fink, Dietmar (1988) [Artigo de periódico]
      350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). ...