Now showing items 1-2 of 2

    • Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si 

      Miotti, Leonardo; Bastos, Karen Paz; Driemeier, Carlos Eduardo; Edon, Vincent; Hugon, Marie-Christine; Agius, Bernard; Baumvol, Israel Jacob Rabin (2005) [Journal article]
      LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. ...
    • Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks 

      Edon, Vincent; Li, Z.; Hugon, Marie-Christine; Agius, Bernard; Krug, Cristiano; Baumvol, Israel Jacob Rabin; Durand, Olivier; Eypert, Céline (2007) [Journal article]
      The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate ...