• Latent ion tracks in amorphous silicon 

      Bierschenk, Thomas; Giulian, Raquel; Afra, Boshra; Rodriguez, M. D.; Schauries, Daniel; Mudie, Stephen; Pakarinen, O. H.; Djurabekova, F.; Nordlund, K.; Osmani, O.; Medvedev, N.; Rethfeld, B.; Ridgway, M.C.; Kluth, Patrick (2013) [Artigo de periódico]
      We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was ...
    • Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2 

      Kluth, Patrick; Pakarinen, O. H.; Djurabekova, F.; Giulian, Raquel; Ridgway, M.C.; Byrne, A. P.; Nordlund, K. (2011) [Artigo de periódico]
      We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 1012 ions=cm², where the surface is completely ...
    • Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation 

      Ridgway, M.C.; Bierschenk, Thomas; Giulian, Raquel; Afra, Boshra; Rodriguez, M. D.; Araújo, Leandro Langie; Byrne, A. P.; Kirby, Nigel; Pakarinen, O. H.; Djurabekova, F.; Nordlund, K.; Schleberger, M.; Osmani, O.; Medvedev, N.; Rethfeld, B.; Kluth, Patrick (2013) [Artigo de periódico]
      Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense ...