Navegação Ciências Exatas e da Terra por Assunto "Compostos de alumínio"
Resultados 1-5 de 5
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Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001)
(2001) [Artigo de periódico]The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford ... -
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
(2002) [Artigo de periódico]The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly ... -
Nitrogen bonding, stability, and transport in AION films on Si
(2004) [Artigo de periódico]The chemical environment of N in nitrided aluminum oxide films on Si~001! was investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding configurations were identified, namely N–Al and N–O–Al, ... -
Thermal behavior of hafnium-based ultrathin films on silicon
(2003) [Artigo de periódico]We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely hafnium oxide (HfO2), silicate (HfSixOy), and aluminum silicate (AlHfxSiyOz), deposited on silicon. These materials are ... -
Thermal stability of plasma-nitrided aluminum oxide films on Si
(2004) [Artigo de periódico]The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si ...