Browsing Exact and Earth Sciences by Author "Lucovsky, Gerald"

Now showing items 1-3 of 3

    • Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substrate 

      Soares, Gabriel Vieira; Krug, Cristiano; Miotti, Leonardo; Bastos, Karen Paz; Lucovsky, Gerald; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2011) [Journal article]
      Thermally driven atomic transport in HfO2 /GeO2/substrate structures on Ge 001 and Si 001 was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing ...

    • Nitrogen bonding, stability, and transport in AION films on Si 

      Soares, Gabriel Vieira; Bastos, Karen Paz; Pezzi, Rafael Peretti; Miotti, Leonardo; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin; Hinkle, C.; Lucovsky, Gerald (2004) [Journal article]
      The chemical environment of N in nitrided aluminum oxide films on Si~001! was investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding configurations were identified, namely N–Al and N–O–Al, ...

    • Thermal stability of plasma-nitrided aluminum oxide films on Si 

      Bastos, Karen Paz; Pezzi, Rafael Peretti; Miotti, Leonardo; Soares, Gabriel Vieira; Driemeier, Carlos Eduardo; Morais, Jonder; Baumvol, Israel Jacob Rabin; Hinkle, C.; Lucovsky, Gerald (2004) [Journal article]
      The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si ...