Navegação Ciências Exatas e da Terra por Assunto "Implantacao ionica"
Resultados 21-25 de 25
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Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing
(2001) [Artigo de periódico]The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering ... -
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/
(2004) [Artigo de periódico]A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-2200 up to 800°C), and subsequent furnace annealing in N2 ambient was performed. ... -
Tailoring coercivity of unbiased exchange-coupled ferromagnet/antiferromagnet bilayers
(2012) [Artigo de periódico]This paper reports experimental results obtained on unconventional exchange-coupled ferromagnet/ antiferromagnet (FM/AF) system showing zero net bias. The Curie temperature of the FM (NiCu) is lower than the blocking ... -
The effects of ion implantation through very thin silicon oxide films
(1994) [Artigo de periódico]The ion implantation of heavy dopant species through very thin silicon oxide gate insulators degrades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of ... -
Tuning the ferromagnetic-antiferromagnetic interfaces of granular Co-CoO exchange bias systems by annealing
(2014) [Artigo de periódico]The low-temperature magnetic behavior of granular Co-CoO exchange bias systems, prepared by oxygen ion implantation in Co thin films and subsequent annealing, is addressed. The thermal activation effects lead to an O ...