Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation

dc.contributor.author	Souza, Joel Pereira de	pt_BR
dc.contributor.author	Sadana, Devendra K.	pt_BR
dc.date.accessioned	2018-06-09T03:34:31Z	pt_BR
dc.date.issued	1993	pt_BR
dc.identifier.issn	0003-6951	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/179258	pt_BR
dc.description.abstract	A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Applied physics letters. New York. Vol. 63, n. 23 (Dec. 1993), p. 3200-3202	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Arseneto de galio	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.subject	Semicondutores	pt_BR
dc.subject	Silício	pt_BR
dc.subject	Alumínio	pt_BR
dc.subject	Dopagem de semicondutores	pt_BR
dc.title	Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000056942	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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