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dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorSadana, Devendra K.pt_BR
dc.date.accessioned2018-06-09T03:34:31Zpt_BR
dc.date.issued1993pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/179258pt_BR
dc.description.abstractA pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 63, n. 23 (Dec. 1993), p. 3200-3202pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectArseneto de galiopt_BR
dc.subjectImplantacao de ionspt_BR
dc.subjectSemicondutorespt_BR
dc.subjectSiliciopt_BR
dc.subjectAlumíniopt_BR
dc.subjectDopagem de semicondutorespt_BR
dc.titleMechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantationpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000056942pt_BR
dc.type.originEstrangeiropt_BR


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