Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub 2/ admixture enabling thermally stable metal-insulator-metal capacitors
dc.contributor.author | Böscke, Tim S. | pt_BR |
dc.contributor.author | Govindarajan, Shrinivas | pt_BR |
dc.contributor.author | Kirsch, Paul D. | pt_BR |
dc.contributor.author | Hung, Puiyee Y. | pt_BR |
dc.contributor.author | Krug, Cristiano | pt_BR |
dc.contributor.author | Lee, Byoung Hun | pt_BR |
dc.contributor.author | Heitmann, Johannes | pt_BR |
dc.contributor.author | Schröder, Uwe | pt_BR |
dc.contributor.author | Pant, Gaurang | pt_BR |
dc.contributor.author | Gnade, Bruce E. | pt_BR |
dc.contributor.author | Krautschneider, Wolfgang | pt_BR |
dc.date.accessioned | 2016-05-24T02:10:57Z | pt_BR |
dc.date.issued | 2007 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141733 | pt_BR |
dc.description.abstract | The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% SiO2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline HfO2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness 1.3 nm at low leakage J 1 V 10−7 A/cm2 . | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 91, no. 7 (Aug. 2007), 072902, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Propriedades dielétricas | pt_BR |
dc.subject | Capacitores | pt_BR |
dc.subject | Háfnio | pt_BR |
dc.title | Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub 2/ admixture enabling thermally stable metal-insulator-metal capacitors | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000657092 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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