Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
dc.contributor.author | Corrêa, Silma Alberton | pt_BR |
dc.contributor.author | Radtke, Claudio | pt_BR |
dc.contributor.author | Soares, Gabriel Vieira | pt_BR |
dc.contributor.author | Miotti, Leonardo | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Dimitrijev, Sima | pt_BR |
dc.contributor.author | Han, J. | pt_BR |
dc.contributor.author | Hold, L. | pt_BR |
dc.contributor.author | Kong, F. | pt_BR |
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.date.accessioned | 2016-05-24T02:10:56Z | pt_BR |
dc.date.issued | 2009 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141728 | pt_BR |
dc.description.abstract | C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 94, no. 25 (June 2009), 251909, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Carbeto de silício | pt_BR |
dc.subject | Filmes finos dieletricos | pt_BR |
dc.subject | Nitrogênio | pt_BR |
dc.subject | Semicondutores de gap largo | pt_BR |
dc.title | Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000712927 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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