Analytical energy loss distribution for accurate high resolution depth profiling using medium energy ion scattering

Abstract

An analytical approach to ion energy loss distributions capable of simplifying medium energy ion scattering MEIS spectral analysis is presented. This analytical approach preserves the accuracy of recent numerical models that evaluate energy loss effects overlooked by standard calculations based on the Gaussian approximation. Results are compared to first principle calculations and experimental MEIS spectra from 0.2- to 1.5-nm-thick HfO2 films on Si, supporting the application of this analytical model for proton scattering in the kinetic energy range from 100 to 200 keV.