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Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substrate

dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorLucovsky, Geraldpt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.date.accessioned2016-05-24T02:10:35Zpt_BR
dc.date.issued2011pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141673pt_BR
dc.description.abstractThermally driven atomic transport in HfO2 /GeO2/substrate structures on Ge 001 and Si 001 was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO2 /Ge interface. In addition, hafnium germanate is formed at 600 °C. Our data indicate that at 500 °C and above HfO2 /GeO2 stacks are stable only if isolated from the Ge substrate.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 98, no. 13 (Mar. 2011), 131912, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectPlasma CVDpt_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectSilíciopt_BR
dc.subjectCompostos de háfniopt_BR
dc.subjectGermâniopt_BR
dc.subjectCrescimento de semicondutorespt_BR
dc.titleIntermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substratept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000783574pt_BR
dc.type.originEstrangeiropt_BR


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