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dc.contributor.authorCopel, Matthewpt_BR
dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.contributor.authorNeumayer, Deborahpt_BR
dc.contributor.authorJamison, Paulpt_BR
dc.date.accessioned2016-05-20T02:11:01Zpt_BR
dc.date.issued2006pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141466pt_BR
dc.description.abstractWe report chemical interactions of Hf-based dielectrics with Re and Pt overlayers during annealing. Reduction of the Hf to a suboxide is observed by x-ray photoelectron spectroscopy, along with a decrease in total oxygen content measured by medium-energy ion scattering. For Re, this unanticipated reaction is highly dependent on the premetallization history of the sample. The presence of hydroxyl groups, observed by infrared absorption, is thought to be responsible. In addition, substantial electrostatic core-level shifts are observed, even in the absence of Hf reduction. The electrostatic shifts are symptomatic of altered threshold voltages for devices.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 88, no. 7 (Feb. 2006), 072914, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectNíveis de caroçopt_BR
dc.subjectMateriais dielétricospt_BR
dc.subjectMetalizacaopt_BR
dc.subjectPlatinapt_BR
dc.subjectReniopt_BR
dc.subjectEspectros de raios-x de fotoeletronspt_BR
dc.subjectEspalhamentopt_BR
dc.subjectHáfniopt_BR
dc.subjectReducaopt_BR
dc.titleReduction of hafnium oxide and hafnium silicate by rhenium and platinumpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000555825pt_BR
dc.type.originEstrangeiropt_BR


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