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dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorTatsch, Felipe Wolffpt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.date.accessioned2016-05-20T02:10:19Zpt_BR
dc.date.issued2006pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141396pt_BR
dc.description.abstractMetal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C induces decomposition of the aluminate films leading to Hf and Al losses mainly into the gas phase. It was possible to avoid this undesired decomposition effect by performing a postdeposition nitridation in NH3 at 850 °C prior to the rapid thermal annealing step. The role of nitridation is discussed in terms of the profiles of incorporated N, before and after rapid thermal annealing, as determined by narrow resonant nuclear reaction profiling.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 89. no. 1 (July 2006), 012904, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectAlumíniopt_BR
dc.subjectDecomposiçãopt_BR
dc.subjectNitretaçãopt_BR
dc.subjectRecozimento térmico rápidopt_BR
dc.subjectCompostos de háfniopt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.titleMetal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analysespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000555879pt_BR
dc.type.originEstrangeiropt_BR


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