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Thermochemical behavior of hydrogen in hafnium silicate films on Si
dc.contributor.author | Driemeier, Carlos Eduardo | pt_BR |
dc.contributor.author | Chambers, James Joseph | pt_BR |
dc.contributor.author | Colombo, Luigi | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.date.accessioned | 2016-05-20T02:10:14Z | pt_BR |
dc.date.issued | 2006 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141386 | pt_BR |
dc.description.abstract | HfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors are discussed in terms of two H bonding states in the films. Si–H bonds are easier to break thermally and formation of these bonds can be suppressed by annealing in O2 to fully oxidize Si atoms. O–H bonds are harder to break thermally. However, hydrogen atmospheres ease desorption of H in O–H species. The results indicate possible paths to achieve low H content in HfSiO gate dielectrics. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 89, no. 5 (July 2006), 051921, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física | pt_BR |
dc.title | Thermochemical behavior of hydrogen in hafnium silicate films on Si | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000549780 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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