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Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers

dc.contributor.authorLopes, João Marcelo Jordãopt_BR
dc.contributor.authorZawislak, Fernando Claudiopt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.contributor.authorLovey, Francisco Carlospt_BR
dc.contributor.authorCondó, Adriana M.pt_BR
dc.date.accessioned2016-05-19T02:09:48Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141325pt_BR
dc.description.abstractSn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures sTù700 °Cd lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 86, no. 2 (Jan. 2005), 023101, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectFilmes finos isolantespt_BR
dc.subjectFotoluminescênciapt_BR
dc.subjectCompostos de silíciopt_BR
dc.subjectEstanhopt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.subjectTratamento térmicopt_BR
dc.titleEffect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layerspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000529592pt_BR
dc.type.originEstrangeiropt_BR


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