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dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorPunchaipetch, P.pt_BR
dc.contributor.authorPant, Gaurangpt_BR
dc.contributor.authorGnade, Bruce E.pt_BR
dc.contributor.authorWallace, Robert M.pt_BR
dc.contributor.authorRotondaro, Antonio L.P.pt_BR
dc.contributor.authorVisokay, J.M.pt_BR
dc.contributor.authorChambers, Jim J.pt_BR
dc.contributor.authorColombo, Luigipt_BR
dc.date.accessioned2016-05-19T02:09:47Zpt_BR
dc.date.issued2004pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141322pt_BR
dc.description.abstractHydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in 1H- and 2H-containing atmospheres was investigated. 1H profiling was accessed by means of nuclear resonant reaction profiling, whereas 2H incorporation was quantified by nuclear reaction analysis. The effects of preannealing in different atmospheres and temperatures were determined, as well as the losses of 1H and 2H from these structures during postannealing in vacuum. The results reveal a rather uniform depth distribution of incorporated 1H, in striking contrast with previous studies on hydrogen in silicon oxide and oxynitrides and hafnium oxide films on Si. These results are discussed in terms of the defects present in each one of the structures studied here.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 85, no. 16 (Oct. 2004), p. 3540-3542pt_BR
dc.rightsOpen Accessen
dc.subjectFísicapt_BR
dc.titleHydrogen and deuterium incorporation and transport in hafnium-based dielectric films on siliconpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000515241pt_BR
dc.type.originEstrangeiropt_BR


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