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dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.contributor.authorGreen, Martin L.pt_BR
dc.contributor.authorJacobson, D.C.pt_BR
dc.contributor.authorEaglesham, D.pt_BR
dc.contributor.authorBernstein, J.D.pt_BR
dc.contributor.authorShao, J.pt_BR
dc.contributor.authorDenholm, A.S.pt_BR
dc.contributor.authorKellerman, P.L.pt_BR
dc.date.accessioned2016-05-11T02:10:25Zpt_BR
dc.date.issued1999pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140716pt_BR
dc.description.abstractA method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation into SiO2 films. Plasma immersion implantation pulse voltages in the range 200–1000 V, and fluences from 1016 to 1017Ncm22 were implanted into thermally grown SiO2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum. N, O, and Si profiles in the films were determined with subnanometric depth resolution by medium energy ion scattering. The results indicate that plasma immersion ion implantation allows for shallow and controlled deposition of significant amounts of nitrogen ~up to 3.8 nm of equivalent Si3N4 thickness!. Implantation is accompanied by moderate damage at the oxynitride/Si interface which can be recovered by thermal annealing.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied Physics Letters. New York. Vol. 74, no. 6 (Feb. 1999), p. 806-808pt_BR
dc.rightsOpen Accessen
dc.subjectFilmes finos dieletricospt_BR
dc.subjectSilíciopt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectNitrogêniopt_BR
dc.subjectPlasmaspt_BR
dc.subjectMétodo de Monte Carlopt_BR
dc.subjectReacoes nuclearespt_BR
dc.subjectRecozimentopt_BR
dc.titleUltrathin silicon oxynitride film formation by plasma immersion nitrogen implantationpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000239743pt_BR
dc.type.originEstrangeiropt_BR


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