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dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorGusev, Evgeni P.pt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.contributor.authorFreire Junior, Fernando Lazaropt_BR
dc.contributor.authorGreen, Martin L.pt_BR
dc.contributor.authorBrasen, D.pt_BR
dc.date.accessioned2016-05-10T02:07:14Zpt_BR
dc.date.issued1998pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140631pt_BR
dc.description.abstractFollowing the observation of the large isotopic effect in D2 passivated gate dielectrics @J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 ~1996!#, we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2 /Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 72, no. 4 (Jan. 1998), p. 450-452pt_BR
dc.rightsOpen Accessen
dc.subjectDeutério : Tratamento térmicopt_BR
dc.subjectDióxido de silíciopt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectFilmes finospt_BR
dc.titleOn the behavior of deuterium in ultrathin SiO2 films upon thermal annealingpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000095724pt_BR
dc.type.originEstrangeiropt_BR


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