Transmission electron microscopy and photoluminescence studies of Er implated low-temperature grown GaAs:Be

Abstract

Characteristic 1.54 mm 4f-4 f emission has been observed from Er31 centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy ~TEM! studies reveal very little structural damage for elevated temperature implants. No Er emission was observed from any of the as-implanted samples, while the Er emission intensity was significantly more intense after 650 °C anneals than after 750 °C anneals. Significant enhancement of the optically active Er incorporation was achieved when the implantation was carried out at 300 °C. For the two total Er fluences employed (5.531013 and 13.631013 Er/cm2) the Er emission intensity exhibited a linear dependence upon implantation fluence, while TEM indicated no significant increase in the damage level at the higher fluence 300 °C implant.