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dc.contributor.authorKlein, T.M.pt_BR
dc.contributor.authorNiu, D.pt_BR
dc.contributor.authorEpling, W.S.pt_BR
dc.contributor.authorLi, W.pt_BR
dc.contributor.authorMaher, D.M.pt_BR
dc.contributor.authorHobbs, C.C.pt_BR
dc.contributor.authorHegde, R.I.pt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorParsons, G.N.pt_BR
dc.date.accessioned2016-05-10T02:06:59Zpt_BR
dc.date.issued1999pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140586pt_BR
dc.description.abstractUsing narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ;3.5 nm Al2O3 films deposited by low temperature ~,400 °C! chemical vapor deposition on Si~100!. Narrow nuclear resonance and Auger depth profiles show similar Al profiles for thicker ~;18 nm! films. The Al profile obtained on the thin film is consistent with a thin aluminum silicate layer, consisting of Al–O–Si bond units, between the silicon and Al2O3 layer. Transmission electron microscopy shows evidence for a two-layer structure in Si/Al2O3 /Al stacks, and x-ray photoelectron spectroscopy shows a peak in the Si 2p region near 102 eV, consistent with Al–O–Si units. The silicate layer is speculated to result from reactions between silicon and hydroxyl groups formed on the surface during oxidation of the adsorbed precursor.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 75, no. 25 (Dec. 1999), p. 4001-4003pt_BR
dc.rightsOpen Accessen
dc.subjectReacoes nuclearespt_BR
dc.subjectAlumíniopt_BR
dc.subjectFilmes finospt_BR
dc.subjectDeposicao de vapor quimicopt_BR
dc.subjectSiliciopt_BR
dc.subjectTemperaturapt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.subjectEspectros de raios x por fotoeletronspt_BR
dc.subjectOxidaçãopt_BR
dc.titleEvidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000142692pt_BR
dc.type.originEstrangeiropt_BR


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