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dc.contributor.authorSadana, Devendra K.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorMarshall, E.D.pt_BR
dc.contributor.authorBaratte, H.pt_BR
dc.contributor.authorCardone, Franckpt_BR
dc.date.accessioned2016-05-10T02:06:59Zpt_BR
dc.date.issued1991pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140584pt_BR
dc.description.abstractStrong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a *D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the *D distribution in the two cases was remarkably different. In the Si-implanted sample the *D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of *D interaction with dopants/dislocations in GaAs are postulated.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 58, n. 4 (Jan. 1991), p. 385-387pt_BR
dc.rightsOpen Accessen
dc.subjectImplantação de íonspt_BR
dc.titlePassivation of n and p dopants in ion-implanted gaas by a 2D+ plasmapt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000055683pt_BR
dc.type.originEstrangeiropt_BR


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